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Półprzewodniki elektroniczne

Obrazczęść #OpisproducentAkcjeRFQ
jakość AT25XE041B-SSHN-T fabryka

AT25XE041B-SSHN-T

IC FLASH 4M SPI 85MHZ 8SOIC
Adesto Technologies
jakość W29N01GVSIA fabryka

W29N01GVSIA

IC FLASH 1G PARALLEL 48TSOP
Elektronika Winbonda
jakość W97BH2KBVX2E fabryka

W97BH2KBVX2E

IC DRAM 2G PARALLEL 134VFBGA
Elektronika Winbonda
jakość BR25S320FVM-WTR fabryka

BR25S320FVM-WTR

IC EEPROM 32K SPI 20MHZ 8MSOP
Rohm Semiconductor
jakość EDB8164B4PR-1D-F-D fabryka

EDB8164B4PR-1D-F-D

IC DRAM 8G PARALLEL 216FBGA
Technologia mikronowa
jakość MT2S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S fabryka

MT2S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S

IC FLASH 1G PARALLEL 63VFBGA
Technologia mikronowa
jakość MT48LC32M8A2FB-75:D TR fabryka

MT48LC32M8A2FB-75:D TR

IC DRAM 256M PARALLEL 60FBGA
Technologia mikronowa
jakość W978H2KBVX2E fabryka

W978H2KBVX2E

IC DRAM 256M PARALLEL 134VFBGA
Elektronika Winbonda
jakość W25Q32FVSFIG fabryka

W25Q32FVSFIG

IC FLASH 32M SPI 104MHZ 16SOIC
Elektronika Winbonda
jakość MTFC16GLWDQ-4M AIT Z TR fabryka

MTFC16GLWDQ-4M AIT Z TR

IC FLASH 128G MMC 100LBGA
Technologia mikronowa
jakość MT29F64G08CBEFBL94C3WC2 fabryka

MT29F64G08CBEFBL94C3WC2

IC FLASH MLC 64G 8GX8
Technologia mikronowa
jakość MT46V128M4FN-75Z:D fabryka

MT46V128M4FN-75Z:D

IC DRAM 512M PARALLEL 60FBGA
Technologia mikronowa
jakość W25Q256FVFJF fabryka

W25Q256FVFJF

IC FLASH MEMORY 256MB
Elektronika Winbonda
jakość MX25U3235FZBI-10G fabryka

MX25U3235FZBI-10G

IC FLASH 32MBIT
MXIC, Macronix
jakość PC28F00AP30TFA fabryka

PC28F00AP30TFA

IC FLASH 1G PARALLEL 64EASYBGA
Technologia mikronowa
jakość W631GU6MB11I fabryka

W631GU6MB11I

IC SDRAM 1GBIT 933MHZ 96WBGA
Elektronika Winbonda
jakość MX29LV400CBTI-55Q fabryka

MX29LV400CBTI-55Q

IC FLASH 4M PARALLEL 48TSOP
MXIC, Macronix
jakość MT48LC16M8A2BB-6A:L TR fabryka

MT48LC16M8A2BB-6A:L TR

IC DRAM 128M PARALLEL 60FBGA
Technologia mikronowa
jakość BR24C02-10TU-1.8 fabryka

BR24C02-10TU-1.8

IC EEPROM 2K I2C 400KHZ 8TSSOP
Rohm Semiconductor
jakość MT49H16M18BM-25 IT:B TR fabryka

MT49H16M18BM-25 IT:B TR

IC DRAM 288M PARALLEL 144UBGA
Technologia mikronowa
jakość MT45W4MW16BBB-708 WT TR fabryka

MT45W4MW16BBB-708 WT TR

IC PSRAM 64M PARALLEL 54VFBGA
Technologia mikronowa
jakość W25Q32DWSFIG TR fabryka

W25Q32DWSFIG TR

IC FLASH 32M SPI 104MHZ 16SOIC
Elektronika Winbonda
jakość W631GU8MB15I TR fabryka

W631GU8MB15I TR

IC SDRAM 1GBIT 667MHZ 78BGA
Elektronika Winbonda
jakość MT29F32G08CBADAWP:D fabryka

MT29F32G08CBADAWP:D

IC FLASH 32G PARALLEL 48TSOP
Technologia mikronowa
jakość MT4D3D3D3D3D3D3D3D3D3D3D3 fabryka

MT4D3D3D3D3D3D3D3D3D3D3D3

IC DRAM 256M PARALLEL 66TSOP
Technologia mikronowa
jakość MT28GU256AAA1EGC-0SIT fabryka

MT28GU256AAA1EGC-0SIT

IC FLASH 256M PARALLEL 64TBGA
Technologia mikronowa
jakość M58LR128KT85ZB5E fabryka

M58LR128KT85ZB5E

IC FLASH 128M PARALLEL 56VFBGA
Technologia mikronowa
jakość MT4A3A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A5 fabryka

MT4A3A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A5

IC DRAM 512M PARALLEL 60VFBGA
Technologia mikronowa
jakość MT4218 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4212 MT4212 MT4212 MT4212 MT4212 MT4212 MT4212 fabryka

MT4218 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4211 MT4212 MT4212 MT4212 MT4212 MT4212 MT4212 MT4212

IC DRAM 2G PARALLEL 96FBGA
Technologia mikronowa
jakość W957D6HBCX7I TR fabryka

W957D6HBCX7I TR

IC PSRAM 128M PARALLEL 54VFBGA
Elektronika Winbonda
jakość MX29LV800CTMC-70G fabryka

MX29LV800CTMC-70G

IC FLASH 8M PARALLEL 44SOP
MXIC, Macronix
jakość MT29RZ4C8DZZMHAN-18W.80Y TR fabryka

MT29RZ4C8DZZMHAN-18W.80Y TR

IC FLASH RAM 4G PARALLEL 533MHZ
Technologia mikronowa
jakość MT29F4G01ADAGDSF-IT:G TR fabryka

MT29F4G01ADAGDSF-IT:G TR

IC FLASH 4G SPI SOIC
Technologia mikronowa
jakość MT41K512M16HA-125:A TR fabryka

MT41K512M16HA-125:A TR

IC DRAM 8G PARALLEL 96FBGA
Technologia mikronowa
jakość MT41K256M8DA-15E:M fabryka

MT41K256M8DA-15E:M

IC DRAM 2G PARALLEL 78FBGA
Technologia mikronowa
jakość MT4D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3 fabryka

MT4D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3

IC DRAM 256M PARALLEL 66TSOP
Technologia mikronowa
jakość BU9832GUL-WE2 fabryka

BU9832GUL-WE2

IC EEPROM 8K SPI 5MHZ 8VCSP50L2
Rohm Semiconductor
jakość MT4S1S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S fabryka

MT4S1S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S

IC DRAM 1G PARALLEL 60FBGA
Technologia mikronowa
jakość AT45DQ321-MWHFHK-T fabryka

AT45DQ321-MWHFHK-T

IC FLASH 32M SPI 104MHZ 8VDFN
Adesto Technologies
jakość AT45DQ161-SSHF-B fabryka

AT45DQ161-SSHF-B

IC FLASH 16M SPI 85MHZ 8SOIC
Adesto Technologies
jakość MT46V16M16TG-5B:F TR fabryka

MT46V16M16TG-5B:F TR

IC DRAM 256M PARALLEL 66TSOP
Technologia mikronowa
jakość W9464G6JH-5I fabryka

W9464G6JH-5I

IC DRAM 64M PARALLEL 66TSOP II
Elektronika Winbonda
jakość EDBA164B2PF-1D-F-R TR fabryka

EDBA164B2PF-1D-F-R TR

IC DRAM 16G PARALLEL 533MHZ
Technologia mikronowa
jakość MT421M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3 fabryka

MT421M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3M3

IC DRAM 512M PARALLEL 90VFBGA
Technologia mikronowa
jakość Wykorzystanie metalu fabryka

Wykorzystanie metalu

IC FLASH 128M SPI 104MHZ 8WSON
Elektronika Winbonda
jakość MT2F2G01AAAEDH4-ITX:E fabryka

MT2F2G01AAAEDH4-ITX:E

IC FLASH 2G SPI 63VFBGA
Technologia mikronowa
jakość MT25QU128ABA8E12-0AAT fabryka

MT25QU128ABA8E12-0AAT

IC FLASH 128M SPI 24TPBGA
Technologia mikronowa
jakość W25Q16FWUXIE TR fabryka

W25Q16FWUXIE TR

IC FLASH 16M SPI 104MHZ 8USON
Elektronika Winbonda
jakość MTFC128GUA-WT fabryka

MTFC128GUA-WT

IC FLASH 1T MMC
Technologia mikronowa
jakość MT25QU128ABA8E14-1SIT TR fabryka

MT25QU128ABA8E14-1SIT TR

IC FLASH 128M SPI 24TPBGA
Technologia mikronowa
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